ذواكر تغيير الطور مستقبل جديد للذواكر في المعالجات المضمنة

Abstract

Phase-Change Memory (PCM) is today the most important among innovative back-end non-volatile memory technologies (NVM), having the potentiality to improve the performance compared to Flash.

PCM provides a wide set of interesting features such as fast read and write access, excellent scalability potential, and high endurance.

In this paper, we compare between PCM and flash memory, a novel µ_treneh Phase-Change Memory (PCM) cell and its integration with a MOSFET selector in a standard 0.18 pm CMOS technology are presented.

We will build a model of PCM memory, and get the simulation results after applying to Multisim software, the high-performance capabilities of PCM cells are investigated and their application in embedded systems is discussed. Write times as low as 10 ns and 20 ns have been measured for the RESET and SET operation, respectively, still granting a 10x read margin. The impact of the RESETpulse on PCM cells endurance has been also evaluaIed.